Recent developments for the AlGaAsSb cell

Conference · Wed Sep 01 04:00:00 EDT 1982 · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)

OSTI ID:5460689

Timmons, M L; Bedair, S M; Hutchby, J A; Markunas, R J

Improvements in open circuit voltage of the individual components of two junction, monolithic solar cells in the Al-Ga-As-Sb material system are reported. These improvements have accompanied reductions in dislocation densities which have been obtained since changing from (111)A- to (100)-oriented GaAs as the growth substrate. Limits of defect reduction by conventional LPE are being approached, and therefore, further significant device improvements seem unlikely. Hybrid growth using both OMCVD and LPE and growth of superlattice structures have begun and are described. These approaches probably have the best chance of solving the remaining defect problems and permitting evaluation of the AlGaAsSb cell's ability to attain the voltages of the cascade model.

• Research Organization: Research Triangle Institute, Research Triangle Park, NC
• OSTI ID: 5460689
• Report Number(s): CONF-820906-
• Conference Information: Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALLOYS
ALUMINIUM ADDITIONS
ALUMINIUM ALLOYS
ANTIMONY ADDITIONS
ANTIMONY ALLOYS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEPOSITION
DIRECT ENERGY CONVERTERS
DISLOCATIONS
ELECTRIC POTENTIAL
EQUIPMENT
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
GRAIN DENSITY
GRAIN GROWTH
LINE DEFECTS
MICROSTRUCTURE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SOLAR CELLS
SOLAR EQUIPMENT
SUBSTRATES
SUPERLATTICES