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U.S. Department of Energy
Office of Scientific and Technical Information

Development of AlGaAsSb/GaAsSb, high efficiency cascade solar cells. Final report, July 1981-January 1983

Technical Report ·
OSTI ID:5628875
The goal of the program reported has been to develop the technology required to fabricate two-junction, monolithic cascade solar cells with potential conversion efficiencies greater than 30% in an AM2, 400 to 1000 sun environment. The modeling which stimulated the interest in the antimonide cell is described, as are the thermodynamic factors which place fundamental restraints on material growth by liquid phase epitaxy (LPE). A description of the LPE growth is presented for each of the components of the cascade structure. The growth of GaAsSb by organometallic vapor phase epitaxy (OM-VPE) is also described. The experimental results for individually grown components and cascade structures are described, including: dark and illuminated current-voltage characteristics, short-circuit current responses, and fill factor, diffusion length, and efficiency measurements. The cell structure and significant experimental results are also outlined for AlGaAs/GaAs system. (LEW)
Research Organization:
Research Triangle Inst., Research Triangle Park, NC (USA)
DOE Contract Number:
AC02-77CH00178
OSTI ID:
5628875
Report Number(s):
RTI-1846-02F; ON: DE85013413
Country of Publication:
United States
Language:
English