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U.S. Department of Energy
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Research on lattice-mismatched semiconductor layers. Final report

Technical Report ·
DOI:https://doi.org/10.2172/6310168· OSTI ID:6310168
The epitaxial growth of AlGaAsSb and the component binary and ternary alloys by organometallic vapor phase epitaxy (OM-VPE) is reported. OM-VPE growth of the binary compounds, GaAs and GaSb, and ternary compounds, AlGaAs, AlGaSb, AlAsSb, and GaAsSb, are discussed with emphasis on the Sb-containing alloys. Growth parameters are reviewed in some detail. It is noted that the growth temperatures and ratio of input fluxes for the growth of Sb-rich alloys are considerably different from the conditions for the growth of As-rich alloys. The results from the study of the binary and ternary components are integrated to grow the quaternary, AlGaAsSb. The work has contributed substantially to the exploration of III-V compound materials which can be grown by OM-VPE. Three papers on work by Varian are appended: The Organometallic VPE Growth of GaSb and GaAsSb using Trimethylantimony by Cooper, Saxena, and Ludowise; Multigap Solar Cell Requirements and the Performance of AlGaAs and S; Cells in Concentrated Sunlight by Moon, James, Vander Plas, Yep, Antypas and Chai; and The Organometallic VPE Growth of GaAs/sub 1-y/Sb/sub y/ Using Trimethylantimony and Ga/sub 1-x/In/sub x/As Using Trimethylarsenic by Cooper, Ludowise, Aebi and Moon.
Research Organization:
Varian Associates, Inc., Palo Alto, CA (USA)
DOE Contract Number:
AC03-79SF10610
OSTI ID:
6310168
Report Number(s):
DOE/SF/10610-T1
Country of Publication:
United States
Language:
English