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Development of high-efficiency-cascade solar cells. Technical progress report No. 5, July 1, 1981-December 31, 1981

Technical Report ·
DOI:https://doi.org/10.2172/5357547· OSTI ID:5357547

The present experimental work is focusing principally on the GaAlAsSb/GaAsSb cascade cell, which is of particular interest since it offers the optimum bandgap combination of 1.8/1.2 eV for maximum efficiency in high temperature concentrator applications. The major problem experienced thus far in the development of the AlGaAsSb/GaAsSb cell has been the relatively low open circuit voltages (V/sub oc/) that have been characteristic of both top and bottom cell junctions. Addressing this problem continues to be a major objective of the continued development of this cell. The AlGaAs/GaAs cell is being retained as a backup to the antimonide cell. Although the AlGaAs/GaAs cell is not capable of achieving the optimum 1.8/1.2 eV bandgap combination, it avoids problems associated with lattice mismatch with the GaAs substrate and offers a more proven materials technology. Computer analysis of this cell shows that a 1.92/1.43 eV bandgap combination is capable of achieving an active area efficiency of about 27% at Am1.5, 300/sup 0/K, 1 sun. At 500 suns this cell is predicted to have efficiency values of about 30% at 300/sup 0/K and 20% at 475/sup 0/K. Experimental AlGaAs/GaAs cells without AR coatings have exhibited measured efficiency values of about 16% at AM1.5, 1 sun. This development effort has been focusing on performance improvement through improved tunnel junction performance, better ohmic contacts, and an optimized AR coating and on fabricating larger area cells.

Research Organization:
Solar Energy Research Inst., Golden, CO (USA); Research Triangle Inst., Research Triangle Park, NC (USA)
DOE Contract Number:
AC02-77CH00178
OSTI ID:
5357547
Report Number(s):
SERI/PR-8136-1-T12; ON: DE82014517
Country of Publication:
United States
Language:
English