Quasi-donor-acceptor pair transitions in GaAsSb and AlGaAsSb on InP
Journal Article
·
· Journal of Applied Physics
- Departamento de Fisica, Universidade Estadual de Londrina, CP6001, CEP 86051-970, Londrina-Parana (Brazil)
We identify quasi-donor-acceptor pair transitions in the photoluminescence spectra of GaAsSb and AlGaAsSb layers, lattice matched to InP, and grown by molecular-beam epitaxy. These alloys show compositional inhomogeneity due to phase separation resulting from miscibility gaps. The presence of Al in the quaternary alloy increases the fluctuation of the electrostatic potential in the epitaxial layer, increasing the variation of recombination energy as a function of intensity excitation in the range of low temperatures.
- OSTI ID:
- 20711759
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 12 Vol. 97; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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