Comparative Sb and As segregation at the InP on GaAsSb interface

Journal Article · Mon Sep 22 04:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2991299· OSTI ID:21175613

Wallart, X; Godey, S; Douvry, Y; Desplanque, L ^[1]

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1. Institut d'Electronique de Microelectronique et de Nanotechnologie, UMR CNRS 8520, Avenue Poincare, B.P. 60069, 59652 Villeneuve d'Ascq (France)

We study the formation of the InP on GaAsSb interface grown by molecular beam epitaxy at 450 deg. C. Using angle resolved x-ray photoemission spectroscopy (XPS), we show that Sb strongly segregates whereas As does not, leading to a Sb-rich InP surface. Similarly, XPS spectra recorded on air-exposed samples reveal oxidized Sb but no oxidized As. We perform a quantitative analysis and determine a Sb segregation coefficient very near to 1. This result is in good agreement with previous reflectance anisotropy spectroscopy observations on the same interface.

• OSTI ID: 21175613
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 12 Vol. 93; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AIR
ANISOTROPY
CRYSTAL GROWTH
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
INDIUM PHOSPHIDES
MOLECULAR BEAM EPITAXY
PHOTOEMISSION
SEGREGATION
X-RAY PHOTOELECTRON SPECTROSCOPY