Pulsed electron beam induced recrystallization and damage in GaAs

Journal Article · Fri Nov 30 23:00:00 EST 1979 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.90987· OSTI ID:5777096

Tandon, J L; Golecki, I; Nicolet, M; Sadana, D K; Washburn, J

Single-pulse electron-beam irradiations of 300-keV 10/sup 15/ Kr/sup +//cm/sup 2/ or 300-keV 3 x 10/sup 12/ Se/sup +//cm/sup 2/ implanted layers in unencapsulated <100> GaAs are studied as a function of the electron beam fluence. The electron beam pulse had a mean electron energy of approx. =20 keV and a time duration of approx. =10/sup -7/ s. Analyses by means of MeV He/sup +/ channeling and TEM show the existence of narrow fluence window (0.4--0.7 J/cm/sup 2/) within which amorphous layers can be sucessfully recrystallized, presumably in the liquid phase regime. Too high a fluence produces extensive deep damage and loss of As.

• Research Organization: Rockwell International Electronics Research Center, Thousand Oaks, California 91360
• OSTI ID: 5777096
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 35:11; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
AMORPHOUS STATE
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
DAMAGE
DATA
ELECTRON BEAMS
ELECTRON MICROSCOPY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
ION IMPLANTATION
IRRADIATION
LAYERS
LEPTON BEAMS
MICROSCOPY
PARTICLE BEAMS
PHYSICAL RADIATION EFFECTS
PNICTIDES
PULSES
RADIATION EFFECTS
RECRYSTALLIZATION