Hardness assurance guidelines for displacement effects for bipolar devices. Report for July 1977-March 1978

Technical Report · Mon May 01 04:00:00 EDT 1978

OSTI ID:5776121

Berger, R A

The objective of this document is to provide an effective means of obtaining semiconductor devices whose neutron-induced response is within known and acceptable limits. The scope of the effort was limited to those procedures for the neutron environment for bipolar transistors, zener diodes, TTL (54/74) series digital integrated circuits, 741-type operational amplifiers, and junction field effect transistors. The objective is met by imposing two levels of Hardness Assurance controls on both the supplier and the user. The supplier levels are called control levels, whereas for the user they are quality levels. For the supplier the difference between levels 1 and 2 are the numbers of Hardness Assurance controls to which the part is subjected in order to be qualified (control level 2 requires screens and process controls, and level 1 is achieved by adding inspection lot radiation tests. For the user, the difference between quality levels 1 and 2 is their lot quality, i.e., the percent of devices in each lot which pass the failure criteria. In level 2 lots, > or = 80 percent of the devices will pass the K sub D criteria with 90 percent confidence. Level 1 screening is designed such that 99.9 percent of the devices in bipolar transistor lots will pass.

• Research Organization: IRT Corp., San Diego, CA (USA)
• OSTI ID: 5776121
• Report Number(s): AD-A-065161
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
AMPLIFIERS
BARYONS
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
ELEMENTARY PARTICLES
FERMIONS
FIELD EFFECT TRANSISTORS
HADRONS
HARDENING
INTEGRATED CIRCUITS
MICROELECTRONIC CIRCUITS
NEUTRONS
NUCLEONS
OPERATIONAL AMPLIFIERS
PHYSICAL RADIATION EFFECTS
QUALITY ASSURANCE
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
TRANSISTORS