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Ion-beam deposition of Nb and Ta refractory superconducting films

Journal Article · · J. Vac. Sci. Technol., A; (United States)
DOI:https://doi.org/10.1116/1.572125· OSTI ID:5767908
A Kaufman ion-beam source has been used to sputter deposit high quality superconducting Nb (T/sub c/ = 9.1 K) and Ta (T/sub c/ = 4.3 K) films. Superconducting and electrical properties were studied as a function of deposition conditions and an optimum set of conditions was found. Nb films always had the bulk bcc crystal structure. The Nb film deposition rates ranged from 1 to 5 A/s with a Xe or Ar sputtering gas pressure of approx.1 to 4 x 10-4 Torr and a beam current density of 5--20 mA/cm/sup 2/. Values of T/sub c/ above 8.3 K for Nb films were obtained with the use of Xe rather than Ar gas. In the case of Ta films, the deposition of a thin (> or =3 A) Nb underlayer was required for the nucleation and growth of Ta in the bulk bcc crystal structure. Ta films deposited without a Nb underlayer always had high resistivity, approx.150 ..mu cap omega.. cm, and a tetragonal ..beta..-Ta crystal structure. The Nb and Ta targets and Si substrates all remained below 70 /sup 0/C during deposition and the films were easily patterned by standard photoresist liftoff.
Research Organization:
Section of Applied Physics, Yale University, New Haven, Connecticut 06520
OSTI ID:
5767908
Journal Information:
J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 1:2; ISSN JVTAD
Country of Publication:
United States
Language:
English

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