Ternary III-V multicolor solar cells containing a quaternary window layer and a quaternary transition layer

Patent · Tue Mar 11 04:00:00 EST 1986

OSTI ID:5751700

Fraas, L M

A photovoltaic device is described consisting of: a conductive crystalline substrate; a layer of GaAs(/sub 1-Y/)Sb(/sub Y/) having regions of differing conductivity forming a homojunction therein contacting the substrate and lattice matching the substrate to within about +-1%; a shorting junction layer contacting the surface of the GaAsSb layer opposite to the surface contacting the substrate; a layer of GaAs (/sub 1-X/)P(/sub X/) having regions of differing conductivity forming a homojunction therein and a larger bandgap than the GaAsSb layer, the GaAs(/sub 1-X/)P(/sub X/) layer contacting the surface of the shorting junction layer opposite to the surface contacting the GaAsSb layer; a layer of Al(/sub Z/)Ga(/sub L-Z/)As(/sub L-X/)P(/sub X/) contacting a surface of the GaAs(/sub 1-X/)P(/sub X/) layer opposite to the surface contacting the shorting junction layer, the Al(/sub Z/)Ga(/sub L-Z/) As(/sub L-X/)P(/sub C/) layer forming a transparent window layer on the GaAs(/sub 1-X/)P(/sub X/); and means for forming an electrical contact to the layers to withdraw photogenerated current therefrom.

• Assignee: Chevron Res. Co., San Francisco, CA
• Patent Number(s): US 4575577
• OSTI ID: 5751700
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALUMINIUM ARSENIDE SOLAR CELLS
CURRENTS
DESIGN
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRIC CONTACTS
ELECTRIC CURRENTS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
EQUIPMENT
GALLIUM ARSENIDE SOLAR CELLS
GRADED BAND GAPS
HOMOJUNCTIONS
JUNCTIONS
LAYERS
OPACITY
OPTICAL PROPERTIES
PHOTOCONDUCTIVITY
PHOTOCURRENTS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT
SUBSTRATES