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Ternary III-V solar cells for multicolor applications

Conference · · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
OSTI ID:5320016
High efficiency, shallow-junction GaAs (1-x)P(x) and GaAs(1-y)Sb(y) ternary III-V solar cells are reported for the first time. Specifically, the authors report on a GaAs (0.82)P(0.18) cell with a band gap of 1.65 eV and an energy conversion efficiency of 14.8% at 7.4 suns and a GaAs(0.88)Sb(0.12) cell with a band gap of 1.2 eV and a conversion efficiency of 15.6% at 18 suns. Both cells were fabricated on GaAs substrates. These cells were then used as the building blocks for multicolor solar cells. Both two-terminal and threeterminal, two-color cells were fabricated. The two-terminal devices used a p+/n+ GaAs-shorting junction to series connect a GaAs(1-x)P(x) n+/p visible light-sensing junction to a GaAs(1-y)Sb(y) n+/p infrared-sensing junction. The expected voltage addition was demonstrated. The three-terminal devices were transistor-like devices in which an n+/p GaAs(1-x)P(x) cell was grown on a p+/n GaAs(1-y)Sb(y) cell. The third terminal was attached via etched-in grooves to the GaAs(1-x)P(x) p-layer. The three-terminal device allows independent testing of both active junctions in a monolithic two-color stack. Both junctions in these three terminal devices performed qualitatively as expected.
Research Organization:
Chevron Research Company, Richmond, CA
OSTI ID:
5320016
Report Number(s):
CONF-820906-
Conference Information:
Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
Country of Publication:
United States
Language:
English