Gallium arsenide phosphide top solar cell

Patent · Mon Apr 14 23:00:00 EST 1986

OSTI ID:5555029

McNeely, J B; Barnett, A M

This patent describes a tandem solar cell having a silicon solar cell for a low energy gap bottom cell and a high energy gap top cell. The improvement which a gallium arsenide phosphide top solar cell which described here is a. a transparent gallium phosphide substrate; b. a first active semiconductor layer of GaAs/sub 1-Y/P/sub Y/ and of a first conductivity type overlying the substrate; c. a second active semiconductor layer of GaAs/sub 1-X/P/sub X/ and of a second conductivity type opposite the first conductivity type overlying and forming a photovoltaic junction therewith; d. a transparent first electrical contact in ohmic contact with the substrate; and e. a transparent second electrical contact in ohmic contact with the second active semiconductor layer.

• Assignee: Astrosystems, Inc., Newark, DE
• Patent Number(s): US 4582952
• OSTI ID: 5555029
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ARSENIC COMPOUNDS
ARSENIDES
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
EQUIPMENT
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDE SOLAR CELLS
GALLIUM PHOSPHIDES
JUNCTIONS
LAYERS
OPACITY
OPTICAL PROPERTIES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PNICTIDES
SOLAR CELLS
SOLAR EQUIPMENT
SUBSTRATES