Gaas on gasb mechanically stacked photovoltaic cells, package assembly, and modules

Patent · Tue Oct 11 04:00:00 EDT 1988

OSTI ID:6537330

McLeod, P S; Cape, J A; Frass, L M; Partain, L D

This patent describes an apparatus comprising mechanically stacked photovoltaic cells, comprising: (a) a bottom photovoltaic cell comprising: (a1) a conductive substrate, (a2) a layer of GaSb having regions of different conductivity forming a homojunction therein and contacting the conductive substrate, (a3) a bottom cell passivating layer contacting the surface of the layer of GaSb opposite to the surface of the GaSb layer contacting the substrate, and (a4) means for forming electrical contacts to the substrate and the incident surface of the bottom cell passivating layer and (b) a top photovoltaic cell comprising: (b1) a layer of GaAs having regions of different conductivity forming a homojunction therein, (b2) a top cell passivating layer contacting the surface of the layer of GaAs which is incident to solar radiation, and (b3) means for forming electrical contacts to the layer of GaAs opposed to solar radiation and the incident surface of the top cell passivating layer; wherein the means for forming electrical contacts in the bottom cell and the means for forming electrical contacts in the top cell are aligned.

• Assignee: Chevron Research Co., San Francisco, CA
• Patent Number(s): US 776893
• OSTI ID: 6537330
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ANTIMONIDES
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DESIGN
DIRECT ENERGY CONVERTERS
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
EQUIPMENT
FABRICATION
GALLIUM ANTIMONIDES
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LAYERS
PASSIVATION
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SOLAR CELLS
SOLAR EQUIPMENT
SUBSTRATES