Prediction of error rates in dose-imprinted memories on board CRRES by two different methods

Journal Article · Sat Jun 01 04:00:00 EDT 1991 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/23.81693· OSTI ID:5749699

Brucker, G J ^[1]; Stassinopoulos, E G ^[2]

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1. General Electric Astro-Space Div., Princeton, NJ (US)
2. NASA-Goddard Space Flight Center, Greenbelt, MD (US)

This paper presents an analysis of the expected space radiation effects on the single event upset (SEU) properties of CMOS/Bulk memories on board the Combined Release and Radiation Effects Satellite (CRRES). Dose-imprint data from ground test irradiations of identical devices are applied to the predictions of cosmic-ray-induced space upset rates in the memories on board the spacecraft. The calculations take into account the effect of total dose on the SEU sensitivity of the devices as the dose accumulates in orbit. Estimates of error rates, which involved an arbitrary selection of a single pair of threshold linear energy transfer (LET) and asymptotic cross-section values, were compared to the results of an integration over the cross-section curves versus LET. The integration gave lower upset rates than the use of the selected values of the SEU parameters. Since the integration approach is more accurate and eliminates the need for an arbitrary definition of threshold LET and asymptotic cross section, it is recommended for all error rate predictions where experimental {sigma} versus LET curves are available.

• OSTI ID: 5749699
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 38:3; ISSN 0018-9499; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CALCULATION METHODS
ELECTRONIC EQUIPMENT
ENERGY TRANSFER
ENVIRONMENTAL IMPACTS
EQUIPMENT
ERRORS
FORECASTING
LET
MEMORY DEVICES
MOS TRANSISTORS
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SATELLITES
SEMICONDUCTOR DEVICES
SPACE FLIGHT
TESTING
TRANSISTORS