SEU rate prediction and measurement of GaAs SRAMs onboard the CRRES satellite

Conference · Tue Nov 30 23:00:00 EST 1993 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:7125363

Weatherford, T R; McDonald, P T ^[1]; Campbell, A B; Langworthy, J B ^[2]

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1. SFA, Inc., Landover, MD (United States) Naval Research Lab., Washington, DC (United States)
2. Naval Research Lab., Washington, DC (United States)

The Combined Release and Radiation Effects Satellite (CRRES) launched in July of 1990 included experiments to study effects of Single Event Upset (SEU) on various microelectronic ICs. The MicroElectronics Package (MEP) subsection of the satellite experiments monitored upset rates on 65 devices over a 15 month period. One of the purposes of the SEU experiments was to determine if the soft error modeling techniques were of sufficient accuracy to predict error rates, and if not, to determine where the deficiencies existed. An analysis is presented on SPICE predicted, SEU ground tested, and CRRES observed heavy ion and proton soft error rates of GaAs SRAMs. Upset rates overestimated the susceptibility of the GaAs SRAMs. Differences are accounted to several factors.

• OSTI ID: 7125363
• Report Number(s): CONF-930704--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 40:6Pt1; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ARSENIC COMPOUNDS
ARSENIDES
COMPUTER CODES
DATA ANALYSIS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
MEMORY DEVICES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
S CODES
SPACE FLIGHT