Variation in SEU sensitivity of dose-imprinted CMOS SRAMs

Conference · Fri Dec 01 04:00:00 EST 1989 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

OSTI ID:6997744

Stassinopoulos, E G ^[1]; Brucker, G S ^[2]; Van Gunten, O ^[3]; Kim, H S ^[4]

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1. NASA/Goddard Space Flight Center, Greenbelt, MD (US)
2. GE Astro-Space Div., Princeton, NJ (US)
3. Lab. for Physical Sciences, College Park, MD (US)
4. Science System and Applications, Inc., Seabrook, MD (US)

This paper reports on an experimental study of dose-induced changes in SEU sensitivity of CMOS static RAMs. Two time-regimes were investigated following exposure of memories to Cobalt-60 gamma rays: the near term within a few hours after exposure, and the long term, after many days. Samples were irradiated both at room and at liquid nitrogen temperatures. The latter procedure was used in order to freeze-in the damage state until SEU measurements could be made before annealing would take place. Results show that memories damaged by dose are more sensitive to upsets by heavy ions. The induced changes are substantial: threshold linear energy transfer (LET) values decreased by as much as 46% and asymptotic cross sections increased by factors of 2 to 4 (unannealed samples).

• OSTI ID: 6997744
• Report Number(s): CONF-890723--
• Conference Information: Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Journal Volume: 36:6
• Country of Publication: United States
• Language: English

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71 CLASSICAL AND QUANTUM MECHANICS
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ENVIRONMENTAL EXPOSURE PATHWAY
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MOS TRANSISTORS
NITROGEN
NONMETALS
NUCLEI
NUMERICAL DATA
ODD-ODD NUCLEI
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
RADIATION EFFECTS
RADIATION HARDENING
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RADIOISOTOPES
RADIOSENSITIVITY
SEMICONDUCTOR DEVICES
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YEARS LIVING RADIOISOT