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Bi-epitaxial grain boundary junctions in YBa sub 2 Cu sub 3 O sub 7

Journal Article · · Applied Physics Letters; (USA)
DOI:https://doi.org/10.1063/1.105355· OSTI ID:5743507
; ; ; ;  [1]
  1. Conductus, Inc., Sunnyvale, California 94086 (US)
We have developed a new way of making grain boundary junctions in YBa{sub 2}Cu{sub 3}O{sub 7} thin films by controlling the in-plane epitaxy of the deposited film using seed and buffer layers. We produce 45{degree} grain boundaries along photolithographically defined lines. The typical value of the critical current density of the junctions is 10{sup 3}--10{sup 4} A/cm{sup 2} at 4.2 K and 10{sup 2}--10{sup 3} A/cm{sup 2} at 77 K, while the rest of the film has a critical current density of 1--3{times}10{sup 6} A/cm{sup 2} at 77 K. The current-voltage characteristics of the junctions show resistively shunted junction behavior and we have used them to fabricate dc superconducting quantum interference devices (SQUIDs) which show modulation at temperatures well above 77 K. This is the first planar high {ital T}{sub {ital c}} Josephson junction technology that appears readily extendable to high {ital T}{sub {ital c}} integrated circuits.
OSTI ID:
5743507
Journal Information:
Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 59:6; ISSN APPLA; ISSN 0003-6951
Country of Publication:
United States
Language:
English