An ion-beam-assisted process for high-T{sub c} Josephson junctions
- National Laboratory for Superconductivity, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, Peoples Republic of (China)
- Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, Peoples Republic of (China)
We have developed a non-ion-etching ion-beam-assisted-deposition (IBAD) process for fabricating high critical-temperature (T{sub c}) grain boundary Josephson junctions through a photoresist liftoff mask. The YBa{sub 2}Cu{sub 3}O{sub 7} (YBCO) junctions fabricated through this process exhibited the resistively-shunted-junction (RSJ)-like I{endash}V characteristics. The well-defined Shapiro steps have been seen on the I{endash}V curves under microwave radiation. The magnetic modulation of critical current of a 4 {mu}m width YBCO junction tallied with the prior simulated Fraunhofer diffraction pattern of a Josephson junction with a spatially homogeneous critical current density. The maximum peak-to-peak modulation voltage across the dc superconducting quantum interference device (SQUID) fabricated by using these junctions reached up to 32 {mu}V at 77 K. The magnetic modulation of the SQUID exhibited periodic behavior with the observed modulation period of 5.0{times}10{sup {minus}4}G. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 553973
- Journal Information:
- Applied Physics Letters, Vol. 71, Issue 16; Other Information: PBD: Oct 1997
- Country of Publication:
- United States
- Language:
- English
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