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An ion-beam-assisted process for high-T{sub c} Josephson junctions

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.120031· OSTI ID:553973
; ; ; ; ;  [1];  [2]
  1. National Laboratory for Superconductivity, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, Peoples Republic of (China)
  2. Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, Peoples Republic of (China)
We have developed a non-ion-etching ion-beam-assisted-deposition (IBAD) process for fabricating high critical-temperature (T{sub c}) grain boundary Josephson junctions through a photoresist liftoff mask. The YBa{sub 2}Cu{sub 3}O{sub 7} (YBCO) junctions fabricated through this process exhibited the resistively-shunted-junction (RSJ)-like I{endash}V characteristics. The well-defined Shapiro steps have been seen on the I{endash}V curves under microwave radiation. The magnetic modulation of critical current of a 4 {mu}m width YBCO junction tallied with the prior simulated Fraunhofer diffraction pattern of a Josephson junction with a spatially homogeneous critical current density. The maximum peak-to-peak modulation voltage across the dc superconducting quantum interference device (SQUID) fabricated by using these junctions reached up to 32 {mu}V at 77 K. The magnetic modulation of the SQUID exhibited periodic behavior with the observed modulation period of 5.0{times}10{sup {minus}4}G. {copyright} {ital 1997 American Institute of Physics.}
OSTI ID:
553973
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 71; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English

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