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Chemical vapor deposition of refractory metals and ceramics II

Conference ·
OSTI ID:5730574
 [1];  [2];  [3]
  1. ed.; Oak Ridge National Lab., TN (United States)
  2. ed.; Stevens Inst. of Tech., Hoboken, NJ (United States)
  3. ed.; Composite Innovation Corp., Woodland Hills, CA (United States)

This symposium was held at the fall meeting of the Materials Research Society in Boston, Massachusetts on December 4--6, 1991. The purpose of this symposium was to provide a forum for exchange of state-of-the-art information on chemical vapor deposition of refractory metals and ceramics II. A number of papers discuss the fundamentals of CVD. They focus on the thermochemistry of CVD and the choice of halide gas species; CVD modeling for high-temperature materials; and kinetics and mass transport in CVD, with an emphasis on silicon carbide deposition. Papers are included which emphasize both the importance of in situ diagnostics and how this area is just now emerging. Papers on microstructure-process-property relationships reveal the ability to control the CVD coatings to a level not seen before. Chemical vapor infiltration to produce composite materials is the subject of a number of other papers and includes considerable discussion of the modeling of the infiltration process. Papers on organometallic CVD focus on a number of issues related to precursors and the mechanisms of deposition. Individual papers are processed separately for inclusion in the appropriate data bases.

OSTI ID:
5730574
Report Number(s):
CONF-911202--; ISBN: 1-55899-144-1
Country of Publication:
United States
Language:
English