Photoelectronic properties of zinc phosphide crystals, films and heterojunctions. Quarterly progress report No. 3, October 1-December 31, 1979

Technical Report · Mon Jan 01 04:00:00 EST 1979

DOI:https://doi.org/10.2172/5718749· OSTI ID:5718749

Bube, R. H.

An increase in crystal growth rate for Zn/sub 3/P/sub 2/ was achieved by a vacuum baking step before crystal growth designed to reduce the pressure of excess gases in the ampoule. An analysis of the problem indicates that results are consistent with expectations. Samples have been submitted to SERI for mass spectroscopic evaluation and SIMS analysis. Construction of suitable equilibrium defect distribution diagrams for Zn/sub 3/P/sub 2/ was initiated. Typical diagrams with their interpretation will be included in the next report. Good rectifying diodes were prepared by vacuum evaporation of Mg onto etched surfaces of Zn/sub 3/P/sub 2/. A barrier height of 0.75 eV was measured from C-V data in good agreement with the published value of 0.80 eV. If the Zn/sub 3/P/sub 2/ surface was given a heat treatment in oxygen before Mg evaporation, the Mg made an ohmic contact indistinguishable from the normal ohmic Ag contact to Zn/sub 3/P/sub 2/. If the Zn/sub 3/P/sub 2/ surface was given a heat treatment in hydrogen before Mg evaporation, good diode characteristics were observed, with strong forward current saturation above 1V. The resistivity of Zn/sub 3/P/sub 2/ films deposited by CSVT in Ar is 1500 ohm-cm before laser annealing and 1200 ohm-cm after laser annealing. Laser annealing apparently produces a preferred orientation of these films. Microprobe analyses of the films deposited by CSVT and vacuum evaporation indicate that these films are almost always Zn-rich with an average 69 atomic % Zn and 31 atomic % P. Films deposited by vacuum evaporation, on the other hand, are strongly P-rich. Variations in stoichiometry with position on a single film are also observed.

• Research Organization: Stanford Univ., CA (USA). Dept. of Materials Science and Engineering
• DOE Contract Number: EG-77-C-01-4042
• OSTI ID: 5718749
• Report Number(s): DSE-4042-T18
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
ANNEALING
CHEMICAL ANALYSIS
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
CRYSTALS
DEPOSITION
DIFFRACTION
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTRON MICROPROBE ANALYSIS
ELECTRON MICROSCOPY
EQUIPMENT
EVAPORATION
FILMS
HEAT TREATMENTS
IMPURITIES
JUNCTIONS
MATERIALS
MICROANALYSIS
MICROSCOPY
MICROSTRUCTURE
MONOCRYSTALS
PHASE TRANSFORMATIONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHOTOVOLTAIC EFFECT
PHYSICAL PROPERTIES
PNICTIDES
RESEARCH PROGRAMS
SCATTERING
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING
VACUUM COATING
X-RAY DIFFRACTION
ZINC COMPOUNDS
ZINC PHOSPHIDES