Photoelectronic properties of zinc phosphide crystals, films and heterojunctions. Quarterly progress report No. 2, July 1-September 30, 1979

Technical Report · Mon Oct 01 04:00:00 EDT 1979

DOI:https://doi.org/10.2172/5324339· OSTI ID:5324339

Bube, R. H.

The closed tube horizontal growth method has been pursued for the growth of single crystals of Zn/sub 3/P/sub 2/. The rate of material transport was increased by increasing the temperature difference between source and growth regions and by decreasing the distance involved. A boule with only 2 grains in a 12 mm diameter has been obtained. The as-grown resistivity of this single crystal Zn/sub 3/P/sub 2/ was 50 ohm-cm, which was reduced to 10 ohm-cm by subsequent annealing in hydrogen at 410/sup 0/C. Initial ZnO/Zn/sub 3/P/sub 2/ (CVD deposition of ZnO) and CdS/Zn/sub 3/P/sub 2/ (CdS by vacuum evaporation) heterostructures were fabricated using small samples of single crystal Zn/sub 3/P/sub 2/ sent from Tony Catalano at Delaware. Not surprisingly, only small photoresponse was obtained with these totally experimental cells. Zn/sub 3/P/sub 2/ films deposited on glass by CSVT were shown to be amorphous whereas those deposited on single crystal CdS were polycrystalline. Indeed several samples showed appreciable large-grain columnar growth at an angle to the substrate plane. Laser annealing was shown to have dramatic effects in crystallizing Zn/sub 3/P/sub 2/ films deposited on Si/sub 3/N/sub 4/ film substrates on sngle crystal Si. Thin films of Zn/sub 3/P/sub 2/ were deposited on glass substrates by vacuum evaporation. As-deposited film resistivities fell in the range of 10/sup 6/-10/sup 8/ ohm-cm; an apparently temporary decrease in resistivity by factors up to 50 could be obtained by annealing in hydrogen. Optical transmission and reflection spectra, as well as photoconductivity spectral response spectral response spectra were measured on a number of these films.

• Research Organization: Solar Energy Research Inst., Golden, CO (USA); Stanford Univ., CA (USA). Dept. of Materials Science and Engineering
• DOE Contract Number: EG-77-C-01-4042
• OSTI ID: 5324339
• Report Number(s): DSE-4042-T12
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360603 -- Materials-- Properties
AMORPHOUS STATE
ANNEALING
CADMIUM COMPOUNDS
CADMIUM SULFIDES
CARRIER LIFETIME
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
CRYSTALS
DEPOSITION
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
EQUIPMENT
FABRICATION
FILMS
GLASS
HEAT TREATMENTS
HEATING
IMPURITIES
INORGANIC PHOSPHORS
JUNCTIONS
LASER-RADIATION HEATING
LIFETIME
LIGHT TRANSMISSION
MATERIALS
MICROSCOPY
MICROSTRUCTURE
MONOCRYSTALS
NITRIDES
NITROGEN COMPOUNDS
OPTICAL PROPERTIES
OXIDES
OXYGEN COMPOUNDS
PHOSPHIDES
PHOSPHORS
PHOSPHORUS COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PLASMA HEATING
PNICTIDES
POLYCRYSTALS
REFLECTIVITY
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SILICON COMPOUNDS
SILICON NITRIDES
SOLAR CELLS
SOLAR EQUIPMENT
SPECTRAL REFLECTANCE
SPECTRAL RESPONSE
SUBSTRATES
SULFIDES
SULFUR COMPOUNDS
SURFACE COATING
SURFACE PROPERTIES
VACUUM COATING
ZINC COMPOUNDS
ZINC OXIDES
ZINC PHOSPHIDES