skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Tandem thin-film solar cell using Cd/sub y/Zn/sub 1-y/Te as the wide bandgap component. Annual subcontract report, 1 April 1985-1 April 1986

Technical Report ·
DOI:https://doi.org/10.2172/5557075· OSTI ID:5557075

The objective of this research program was to develop CdZnTe as the wide-bandgap component for all-thin-film, polycrystalline tandem solar cell. Single-crystal and polycrystalline CdZnTe films containing about 0.20 mole fraction of ZnTe corresponging to a bandgap of 1.65 eV were deposited by congruent evaporation in uhv on sapphire and ITO/glass substrates. CdZnTe and single-crystal CdTe films, semi-insulating as grown films, were annealed to p-type in Te overpressures. The Hall mobilities and carrier concentration ranges for the films were respectively 20 to 75 cm/sup 2//V-s and 5 x 10/sup 4/ - 10/sup 16/ cm/sup -3/. The use of Hg(Cd,Zn) Te alloys reduced contact resistances as low as 0.1 ohm-cm/sup 2/. Indium Schottky barriers of 0.9 eV were observed on CdZnTe single-crystal thin films.

Research Organization:
Ford Aerospace and Communications Corp., Newport Beach, CA (USA)
DOE Contract Number:
AC02-83CH10093
OSTI ID:
5557075
Report Number(s):
SERI/STR-211-2972; ON: DE86010720
Country of Publication:
United States
Language:
English