Tandem thin-film solar cell using Cd/sub y/Zn/sub 1-y/Te as the wide bandgap component. Annual subcontract report, 1 April 1985-1 April 1986

Technical Report · Sun Jun 01 04:00:00 EDT 1986

DOI:https://doi.org/10.2172/5557075· OSTI ID:5557075

Zanio, K.

The objective of this research program was to develop CdZnTe as the wide-bandgap component for all-thin-film, polycrystalline tandem solar cell. Single-crystal and polycrystalline CdZnTe films containing about 0.20 mole fraction of ZnTe corresponging to a bandgap of 1.65 eV were deposited by congruent evaporation in uhv on sapphire and ITO/glass substrates. CdZnTe and single-crystal CdTe films, semi-insulating as grown films, were annealed to p-type in Te overpressures. The Hall mobilities and carrier concentration ranges for the films were respectively 20 to 75 cm/sup 2//V-s and 5 x 10/sup 4/ - 10/sup 16/ cm/sup -3/. The use of Hg(Cd,Zn) Te alloys reduced contact resistances as low as 0.1 ohm-cm/sup 2/. Indium Schottky barriers of 0.9 eV were observed on CdZnTe single-crystal thin films.

• Research Organization: Ford Aerospace and Communications Corp., Newport Beach, CA (USA)
• DOE Contract Number: AC02-83CH10093
• OSTI ID: 5557075
• Report Number(s): SERI/STR-211-2972; ON: DE86010720
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ANNEALING
CADMIUM TELLURIDE SOLAR CELLS
CARRIER MOBILITY
CASCADE SOLAR CELLS
CHALCOGENIDES
CRYSTAL GROWTH
DIRECT ENERGY CONVERTERS
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
EQUIPMENT
FABRICATION
FILMS
HEAT TREATMENTS
MOBILITY
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SOLAR CELLS
SOLAR EQUIPMENT
TELLURIDES
TELLURIUM COMPOUNDS
TESTING
THIN FILMS
ZINC COMPOUNDS
ZINC TELLURIDES