CdZnTe as a wide-band-gap absorber for a tandem, thin-film solar cell: Final subcontract report, 1 April 1986-31 August 1987

Technical Report · Thu Oct 01 00:00:00 EDT 1987

DOI:https://doi.org/10.2172/5693362· OSTI ID:5693362

Zanio, K. R.

The objective of this program was to prepare by low-cost ultra-high-vacuum (uhv) methods on all-thin-film (approximately 1.6 eV) wide-bandgap solar cell using CdZnTe as the absorber layer. ZnTe/CdZnTe/n-CdS/ITO/glass structures were prepared by congruent evaporation in uhv. Ohmic contact to the ZnTe with HgZnTe and conversion of the high-resistivity ZnTe and CdZnTe was simultaneously undertaken by the closed-space vapor deposition of HgZnTe. Mesa structures did not show blocking action. Single-crystal cells were prepared by the deposition of CdS on bulk p-CdTe and thin-film, single-crystal p-CdTe-on-sapphire and p-CdZnTe-on-sapphire. A comparison of results suggests that the all-thin-film polycrystalline structure is limited by the CdZnTe. 6 refs., 4 figs., 1 tab.

• Research Organization: Ford Aerospace and Communications Corp., Newport Beach, CA (USA)
• DOE Contract Number: AC02-83CH10093
• OSTI ID: 5693362
• Report Number(s): SERI/STR-211-3217; ON: DE88001114
• Resource Relation: Other Information: Portions of this document are illegible in microfiche products. Original copy available until stock is exhausted
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
CADMIUM TELLURIDE SOLAR CELLS
FABRICATION
RESEARCH PROGRAMS
CHEMICAL VAPOR DEPOSITION
PROGRESS REPORT
THIN FILMS
CHEMICAL COATING
DEPOSITION
DIRECT ENERGY CONVERTERS
DOCUMENT TYPES
EQUIPMENT
FILMS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING
140501* - Solar Energy Conversion- Photovoltaic Conversion