Proton and heavy ion upsets in GaAs MESFET devices
Conference
·
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:5707956
- Sachs/Freeman Associates, Inc., Bowie, MD (United States)
- Naval Research Lab., Washington, DC (United States)
- Clemson Univ., SC (United States). Dept. of Physics and Astronomy
This paper reports on proton and heavy SEU data that has been obtained for devices made by several GaAs MESFET manufacturers. Proton energy dependence and proton and heavy ion upset cross sections are reported. Measurements of charge collection from latches designed with various gate widths show that charge collection depths appear deeper than the 1 {mu}m depth expected. Critical charge does not scale linearly with area. Proton upset cross sections are reduced with increased device width.
- OSTI ID:
- 5707956
- Report Number(s):
- CONF-910751--
- Conference Information:
- Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 38:6
- Country of Publication:
- United States
- Language:
- English
Similar Records
Charge collection in GaAs MESFETs and MODFETs
Heavy ion and proton analysis of a GaAs C-HIGFET SCRAM
Single-event upset in GaAs E/D MESFET logic
Conference
·
Sat Nov 30 23:00:00 EST 1991
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
·
OSTI ID:5614033
Heavy ion and proton analysis of a GaAs C-HIGFET SCRAM
Conference
·
Tue Nov 30 23:00:00 EST 1993
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
·
OSTI ID:7125326
Single-event upset in GaAs E/D MESFET logic
Conference
·
Fri Nov 30 23:00:00 EST 1990
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)
·
OSTI ID:5933571
Related Subjects
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ARSENIC COMPOUNDS
ARSENIDES
BARYON REACTIONS
CHARGED-PARTICLE REACTIONS
CROSS SECTIONS
DESIGN
ELECTRODES
ELECTRONIC CIRCUITS
ENERGY DEPENDENCE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HADRON REACTIONS
HEAVY ION REACTIONS
NUCLEAR REACTIONS
NUCLEON REACTIONS
PNICTIDES
PROTON REACTIONS
RADIATION EFFECTS
VARIATIONS
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ARSENIC COMPOUNDS
ARSENIDES
BARYON REACTIONS
CHARGED-PARTICLE REACTIONS
CROSS SECTIONS
DESIGN
ELECTRODES
ELECTRONIC CIRCUITS
ENERGY DEPENDENCE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HADRON REACTIONS
HEAVY ION REACTIONS
NUCLEAR REACTIONS
NUCLEON REACTIONS
PNICTIDES
PROTON REACTIONS
RADIATION EFFECTS
VARIATIONS