Heavy ion and proton analysis of a GaAs C-HIGFET SCRAM
- SFA Inc., Landover, MD (United States) Naval Research Lab., Washington, DC (United States)
- Naval Research Lab., Washington, DC (United States)
- Honeywell, Inc., Minneapolis, MN (United States)
The authors present heavy ion and proton upset measurements, including total dose, and displacement damage on a one micron, GaAs, complementary-heterostructure insulated-gate FET (C-HIGFET) 1k x 1 SRAM. SEU characteristics show a two order of magnitude improvement over GaAs MESFET technology. Heavy-ion upset equilibrium measurements show that all cells upset with equal probability at the five percent LET threshold. This indicates that for this device the shape of the cross section versus LET curve is a result of a probability distribution that applies to all cells and is not the result of variations in cell sensitivities. The data set also indicates that the traditional two-dimensional cos([theta]) normalization to LET and fluence are not applicable to this technology.
- OSTI ID:
- 7125326
- Report Number(s):
- CONF-930704--
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 40:6Pt1; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ARSENIC COMPOUNDS
ARSENIDES
DOSES
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IONIZING RADIATIONS
MEMORY DEVICES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION DOSES
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
TRANSISTORS