Heavy ion SEU immunity of a GaAs complementary HIGFET circuit fabricated on a low temperature grown buffer layer

Journal Article · Thu Nov 30 23:00:00 EST 1995 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.489226· OSTI ID:203707

Marshall, P W; Weatherford, T; Carts, M ^[1]; Dale, C J; McMorrow, D ^[1]; Peczalski, A; Baier, S; Nohava, J; Skogen, J ^[2]

---

1. Naval Research Lab., Washington, DC (United States)
2. Honeywell Systems and Research Center, Bloomington, MN (United States)

The authors compare dynamic SEU characteristics of GaAs complementary HIGFET devices fabricated on conventional semi-insulating substrates versus low temperature grown GaAs (LT GaAs) buffer layers. Heavy ion test results on shift register and flip-flop devices from the same process lot demonstrate that the LT GaAs layer provides immunity from upsets, even at an LET value of 90 MeV {center_dot} cm{sup 2}/mg. This result is also consistent with pulsed laser measurements performed on the same flip-flop circuits used in the ion test.

• OSTI ID: 203707
• Report Number(s): CONF-950716--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 42; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR STORAGE DEVICES