Particle-induced mitigation of SEU sensitivity in high data rate GaAs HIGFET technologies

Journal Article · Thu Nov 30 23:00:00 EST 1995 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.489225· OSTI ID:203706

Marshall, P W; Weatherford, T R ^[1]; Dale, C J ^[1]; La Macchia, M ^[2]; LaBel, K A ^[3]

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1. Naval Research Lab., Washington, DC (United States)
2. Motorola, Inc., Phoenix, AZ (United States)
3. National Aeronautics and Space Administration, Greenbelt, MD (United States)

Proton and heavy ion data on two GaAs HIGFET logic families, one source coupled (SCFL) and the other complementary (C-HIGFET), show the importance of dynamic testing and develop a new technique for mitigating SEU sensitivity by minimizing charge enhancement effects.

• OSTI ID: 203706
• Report Number(s): CONF-950716--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 42; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
HEAVY IONS
LOGIC CIRCUITS
MITIGATION
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
PROTONS