Single-event phenomena in GaAs devices and circuits

Journal Article · Mon Apr 01 04:00:00 EST 1996 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.490906· OSTI ID:242440

McMorrow, D; Melinger, J S; Campbell, III, A B; Weatherford, T R ^[1]; Buchner, S; Knudson, A R; Tran, L H ^[2]

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1. Naval Research Lab., Washington, DC (United States)
2. SFA Inc., Landover, MD (United States)

The single-event upset (SEU) characteristics of GaAs devices and circuits are reviewed. GaAs FET-based integrated circuits (IC`s) are susceptible to upsets from both cosmic-ray heavy ions and protons trapped in the Earth`s radiation belts. The origin of the SEU sensitivity of GaAs IC`s is discussed in terms of both device-level and circuit-level considerations. At the device level, efficient charge-enhancement mechanisms through which more charge can be collected than is deposited by the ion have a significant negative impact on the SEU characteristics of GaAs IC`s. At the circuit level, different GaAs digital logic topologies exhibit different levels of sensitivity to SEU because of variations in parameters, including logic levels, capacitances, and the degree of gate or peripheral isolation. The operational and SEU characteristics of several different GaAs logic families are discussed. Recent advances in materials and processing that provide possible solutions to the SEU problem are addressed.

• OSTI ID: 242440
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 2 Vol. 43; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
CHARGE COLLECTION
COSMIC RADIATION
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
INTEGRATED CIRCUITS
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SPACE FLIGHT
TECHNOLOGY ASSESSMENT