Effects of low-temperature buffer-layer thickness and growth temperature on the SEE sensitivity of GaAs HIGFET circuits

Journal Article · Sun Nov 30 23:00:00 EST 1997 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.659049· OSTI ID:644222

Weatherford, T R; Fouts, D J ^[1]; Marshall, P W ^[2]; Marshall, C J ^[2]; Mathes, B; LaMacchia, M ^[3]

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1. Naval Postgraduate School, Monterey, CA (United States)
2. Naval Research Lab., Washington, DC (United States)
3. Motorola Government Systems, Scottsdale, AZ (United States)

Heavy-ion Single Event Effects (SEE) test results reveal the role of growth temperature and buffer layer thickness in the use of a low-temperature grown GaAs (LT GaAs) buffer layer for suppressing SEE sensitivity in GaAs HIGFET circuits.

• OSTI ID: 644222
• Report Number(s): CONF-970711--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 44; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ERRORS
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
HEAVY IONS
INTEGRATED CIRCUITS
PHYSICAL RADIATION EFFECTS
SENSITIVITY
TEMPERATURE DEPENDENCE