Photovoltaic mechanisms in polycrystalline thins-film solar cells. Quarterly technical progress report No. 1, September 27-December 27, 1978

Technical Report · Fri Jun 01 04:00:00 EDT 1979

DOI:https://doi.org/10.2172/5698510· OSTI ID:5698510

Zanio, K.

Preliminary studies were initiated to examine and alleviate the deleterious effect of grain boundaries in solar cells fabricated from InP. The planar reactive deposition system was modified so that the InP substrate temperature could be reduced below the single crystalline to polycrystalline transition temperature and effects of grain boundaries on p-n junctions can be more readily and reproducibly separated out. A model for grain boundaries intersecting a p-n junction was introduced. In the model, the grain boundary is treated as a two-dimensional array of lower bandgap material which enhances the leakage current at the p-n junction. The effect of various etchants on grain boundaries in InP was also examined as a preliminary step toward passivating the grain boundaries. An anodic oxide and InGaP, both candidates as passivation layers, were deposited on single-crystal InP.

• Research Organization: Hughes Research Labs., Malibu, CA (USA)
• OSTI ID: 5698510
• Report Number(s): DSE-3412-T1
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CONVERSION
CRYSTAL STRUCTURE
CRYSTALS
CURRENTS
DIRECT ENERGY CONVERSION
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ENERGY CONVERSION
ENERGY GAP
ETCHING
FILMS
GRAIN BOUNDARIES
INDIUM PHOSPHIDE SOLAR CELLS
JUNCTIONS
LEAKAGE CURRENT
MATHEMATICAL MODELS
MICROSTRUCTURE
P-N JUNCTIONS
PASSIVATION
PERFORMANCE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHOTOVOLTAIC CONVERSION
PHOTOVOLTAIC EFFECT
PHYSICAL PROPERTIES
POLYCRYSTALS
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SURFACE FINISHING