Photovoltaic mechanisms in polycrystalline thin-film solar cells. Quarterly technical progress report No. 3, April 27-July 27, 1979

Technical Report · Mon Oct 01 04:00:00 EDT 1979

DOI:https://doi.org/10.2172/5430380· OSTI ID:5430380

Zanio, K.

Indium phosphide films were prepared on (100) InP substrates by the planar reactive deposition technique in the temperature range 220 to 260/sup 0/C and growth rates of about 1 ..mu..m/hr, complete single-crystal epitaxy was achieved. The onset of the single-crystal to polycrystalline transition at 245/sup 0/C is characterized by a mosaic structure. Parallel studies to eventually passivate the grain boundaries in polycrystalline films were undertaken. A 5HC1:3HNO/sub 3/:4HF etch was found to preferentially attack 90% of the grain boundaries in bulk polycrystalline InP wafers. Canyons with depths greater than 10 ..mu..m and widths less than 1 ..mu..m were the most common form of attack. Although the etch had no effect on simple twin boundaries, preferential attack was observed at interfaces formed by multiple twinning events.

• Research Organization: Hughes Research Labs., Malibu, CA (USA)
• OSTI ID: 5430380
• Report Number(s): DSE-3412-T3
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
CRYSTAL STRUCTURE
CRYSTALS
CURRENTS
DEPOSITION
DIRECT ENERGY CONVERTERS
ELECTRIC CURRENTS
EPITAXY
EQUIPMENT
ETCHING
FABRICATION
FILMS
GRAIN BOUNDARIES
INDIUM COMPOUNDS
INDIUM PHOSPHIDE SOLAR CELLS
INDIUM PHOSPHIDES
LEAKAGE CURRENT
MICROSTRUCTURE
MONOCRYSTALS
PASSIVATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHOTOVOLTAIC EFFECT
PNICTIDES
POLYCRYSTALS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE FINISHING
TWINNING