Grain boundary etching in InP
Journal Article
·
· J. Appl. Phys.; (United States)
Grain boundaries in bulk polycrystalline InP wafers are preferentially attacked by a 5 HCl:3HNO/sub 3/:4 HF etch. Canyons with depth > 10 ..mu..m and widths approx. 1 ..mu..m are the most common form of attack. Although the etch has effect on simple twin boundaries, preferential attack occurs at interfaces formed by multiple twinning events.
- Research Organization:
- Hughes Research Laboratories, 3011 Malibu Canyon Road, Malibu, California 90265
- OSTI ID:
- 5380360
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 51:7; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
CRYSTAL STRUCTURE
CRYSTALS
ETCHING
GRAIN BOUNDARIES
HYDROCHLORIC ACID
HYDROFLUORIC ACID
HYDROGEN COMPOUNDS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INORGANIC ACIDS
INTERFACES
MATERIALS
MICROSTRUCTURE
NITRIC ACID
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POLYCRYSTALS
SEMICONDUCTOR MATERIALS
SURFACE FINISHING
TWINNING
360602* -- Other Materials-- Structure & Phase Studies
CRYSTAL STRUCTURE
CRYSTALS
ETCHING
GRAIN BOUNDARIES
HYDROCHLORIC ACID
HYDROFLUORIC ACID
HYDROGEN COMPOUNDS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INORGANIC ACIDS
INTERFACES
MATERIALS
MICROSTRUCTURE
NITRIC ACID
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POLYCRYSTALS
SEMICONDUCTOR MATERIALS
SURFACE FINISHING
TWINNING