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U.S. Department of Energy
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Grain boundary etching in InP

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.328148· OSTI ID:5380360
Grain boundaries in bulk polycrystalline InP wafers are preferentially attacked by a 5 HCl:3HNO/sub 3/:4 HF etch. Canyons with depth > 10 ..mu..m and widths approx. 1 ..mu..m are the most common form of attack. Although the etch has effect on simple twin boundaries, preferential attack occurs at interfaces formed by multiple twinning events.
Research Organization:
Hughes Research Laboratories, 3011 Malibu Canyon Road, Malibu, California 90265
OSTI ID:
5380360
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 51:7; ISSN JAPIA
Country of Publication:
United States
Language:
English