Amorphous silicon solar cells by hydrogen implantation. Quarterly report No. 2, 1 April-30 June 1979
The mass of a silicon film for an amorphous device cannot be deposited by ion implantation. It is likely, however, that implantation can be used to modify an existing nonamorphos silicon film to achieve the material characteristics and device structure required for an amorphous cell. This specific possibility is to be examined. Cell devices are to be fabricated of CVD polysilicon deposited upon isolated substrates. Implanatation is to be employed to amorphize and hydrogenate the active material of the already functional devices. Two ion implantation machines being used for investigation under this program can provide the ions of immediate interest, /sup 1/H/sup +/, /sup 11/B/sup +/, /sup 16/O/sup +/, /sup 19/F/sup +/, /sup 28/Si/sup +/, /sup 31/P/sup +/, /sup 40/Ar/sup +/, at energies from 10 through 200 keV and at beam currents of a few hundred microamperes or more. Some of the ions, hydrogen in particular, may be utilized in very high level doses. The available implanters are adequate for study purposes. Much higher current machines would be needed for cost effective production processing. Such machines are already feasible by use of designs based upon existing technology. Investigations under this program are to emphasize the use of cell devices to provide information regarding application of ion implantation to amorphous silicon cells. Special ion implantation procedures and analyses are required. Developmental activities described include the preparation of implantation capabilities and procedures, preparation of processing routines for a test cell device and preliminary evaluation of the effects of hydrogen implantation upon operation of devices. (WHK)
- Research Organization:
- Spire Corp., Bedford, MA (USA)
- DOE Contract Number:
- AC03-79ET23042
- OSTI ID:
- 5696726
- Report Number(s):
- SAN-3042-2; QR-10064-02
- Country of Publication:
- United States
- Language:
- English
Similar Records
Amorphous silicon solar cells by hydrogen implantation. Final report, 1 January 1979-31 August 1980
Amorphous silicon solar cells by hydrogen implantation. Quarterly report No. 3, July 1-September 30, 1979
Related Subjects
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
AMORPHOUS STATE
ANNEALING
CHARGED PARTICLES
CHEMICAL REACTIONS
DIRECT ENERGY CONVERTERS
DISTRIBUTION
ELEMENTS
ENERGY RANGE
EQUIPMENT
FABRICATION
HEAT TREATMENTS
HYDROGEN IONS
HYDROGENATION
ION IMPLANTATION
IONS
KEV RANGE
KEV RANGE 10-100
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SPATIAL DISTRIBUTION