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U.S. Department of Energy
Office of Scientific and Technical Information

Amorphous silicon solar cells by hydrogen implantation. Quarterly report No. 3, July 1-September 30, 1979

Technical Report ·
DOI:https://doi.org/10.2172/5197979· OSTI ID:5197979

During the third quarter of this program a large number of implantation matrices were evaluated and material investigations initiated. The usefulness of ion implantation in the amorphization and hydrogenation of devices was established. Indeed both of these processes can controllably and reproducibly be carried out. The amorphized material shows superior visible-light absorption behavior compared to crystalline silicon. Hydrogenation with subsequent furnace annealing produces higher open-circuit voltage, in selected devices, than the polycrystalline material. The use of infrared spectroscopy established the presence and type of silicon-hydrogen bonding. The implantation experiments will continue during the final quarter of this program, with the aim of optimizing the performance of hydrogenated amorphous silicon solar cells by ion implantation.

Research Organization:
Spire Corp., Bedford, MA (USA)
DOE Contract Number:
AC03-79ET23042
OSTI ID:
5197979
Report Number(s):
SAN-3042-3
Country of Publication:
United States
Language:
English