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Characterization of SnO2 GIAR films

Conference · · Proceedings of SPIE - The International Society for Optical Engineering
DOI:https://doi.org/10.1117/12.51257· OSTI ID:5691660
 [1];  [1];  [2];  [2]
  1. City Univ. of New York (CUNY), NY (United States)
  2. Argonne National Laboratory (ANL), Argonne, IL (United States)
In an attempt to develop a monochromator of synchrotron radiation ((Delta) E approximately 10-6 eV) using grazing incidence antireflection (GIAR) principle, we made SnO2 GIAR films on Pd (buffer layer) / (alpha) -Al2O3 (substrate). Films are fabricated by magnetron sputtering technique and characterized film thickness and interface roughness by x-ray diffraction technique using the conventional and synchrotron radiation sources. We demonstrated the electronic scattering suppression of approximately 10-2 and that the present system is feasible to achieve the required goals for monochromatization of synchrotron radiation source for the energy range of 23.87 keV.
Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)
DOE Contract Number:
W-31109-ENG-38
OSTI ID:
5691660
Report Number(s):
ANL/CP--73464; CONF-9107115--12; ON: DE91015539
Conference Information:
Journal Name: Proceedings of SPIE - The International Society for Optical Engineering Journal Volume: 1546
Country of Publication:
United States
Language:
English