Monolithic integration of a lens inside a diode-laser cavity for beam convergence
Journal Article
·
· Appl. Phys. Lett.; (United States)
A lens is monolithically integrated inside a diode-laser cavity for the first time. The lens is formed on one end of the mesa-type waveguide by making the equivalent refractive index lower toward the edges of the mesa. The lens makes the phase front of the lasing mode concave at the facet. Correspondingly, a (laterally) converging laser beam is realized without using any separate optical components. A numeric analysis of the beam convergence is also given.
- Research Organization:
- Electrotechnical Laboratory, Sakura, Niihari, Ibaraki 305, Japan
- OSTI ID:
- 5687958
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 47:3; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
EPITAXY
ETCHING
FABRICATION
FIBERS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASER CAVITIES
LASERS
LENSES
LIQUID PHASE EPITAXY
OPTICAL FIBERS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE FINISHING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
EPITAXY
ETCHING
FABRICATION
FIBERS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASER CAVITIES
LASERS
LENSES
LIQUID PHASE EPITAXY
OPTICAL FIBERS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE FINISHING