Monolithic Ga/sub 1-x/In/sub x/ as diode lasers

Journal Article · Tue Jul 01 04:00:00 EDT 1975 · IEEE J. Quant. Electron., v. QE-11, no. 7, pp. 464-467

DOI:https://doi.org/10.1109/JQE.1975.1068665· OSTI ID:4161135

Doerbeck, F H; Lawley, K L; Blum, F A; Campbell, J C

Monolithic homojunction diode lasers have been fabricated from vapor- grown Ga/sub 1-x/In/sub x/As (0 less than or equal to x greater than or equal to 0.06) mesa structures with grown optical facets. The Ga/sub 1-x/In/sub x/As lasers have been operated at 77$sup 0$K, and similar GaAs mesa devices have lased between 77 and 300$sup 0$K. Monolithic arrays of up to six mesa lasers on a single substrate have been operated with all lasers oscillating simultaneously. (auth)

• Research Organization: Texas Instruments Inc., Dallas
• Sponsoring Organization: USDOE
• NSA Number: NSA-33-007214
• OSTI ID: 4161135
• Journal Information: IEEE J. Quant. Electron., v. QE-11, no. 7, pp. 464-467, Journal Name: IEEE J. Quant. Electron., v. QE-11, no. 7, pp. 464-467; ISSN IEJQA
• Country of Publication: United States
• Language: English

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