Monolithic laser. Annual technical report, 1 May 1974--30 Apr 1975

Technical Report · Tue Jul 01 04:00:00 EDT 1975

OSTI ID:7330497

Blum, F A; Bellavance, D W; Campbell, J C; Doerbeck, F H; Lawley, K L

The accomplishments of the second phase of the research program to develop the first prototype integrated optical transmitter are described. Extending the work of phase one on optically pumped mesa lasers, Ga(1-x)In(x)As (0 < or = x < or = 0.06) diode mesa lasers were developed. These homojunction devices are the first wavelength-tunable, monolithic electrical injection lasers and were operated between liquid nitrogen and room temperatures. Monolithic arrays of up to six mesa lasers were operated with all the lasers oscillating simultaneously. Laser characteristics, including emission spectra, power output, and threshold current densities, were measured in detail. Since these devices are homojunctions, their threshold current densities at room temperature are very high and their efficiencies are low. To improve on these characteristics, development of single-heterostructure GaAs-Ga(1-x)Al(x)As mesa lasers was begun. These devices will operate under pulsed drive currents with low threshold current densities at room temperature. Their development and integration with planar waveguides continues under phase three of the current contract. Finally, chemical etching of the mesa structures was explored as a possible alternative to growing the mesas. Preliminary encouraging results are given.

• Research Organization: Texas Instruments, Inc., Dallas (USA). Central Research Lab.
• OSTI ID: 7330497
• Report Number(s): AD-A-016799; TI-08-75-27
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
EFFICIENCY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
OPTICAL PUMPING
PNICTIDES
RESEARCH PROGRAMS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS