Monolithic laser. Annual technical report No. 3, 1 May 75--31 Jan 77

Technical Report · Tue Mar 01 04:00:00 EST 1977

OSTI ID:7321229

Lawley, K L; Bellavance, D W; Campbell, J C

The accomplishments of the third phase of the research program to develop the first prototype integrated optical transmitter are described. A new monolithic laser structure called an I-bar mesa laser was demonstrated. This double heterojunction GaAs/GaAlAs laser was grown by selective liquid phase epitaxy. The best devices operated at 525 mA drive current with a pulsed, 300 K threshold current density of 7.5 kA/sq cm. Methods of fabricating these devices are discussed. Also, various types of grown waveguides including bends and Y's were demonstrated. For bends, a 3 dB signal attenuation is observed at a radius of curvature of approximately 1.3 mm (50 mils). This radius appears to be a practical lower limit for integrated optical circuit waveguides. The I-bar mesas were combined on a chip with a grown three-layer waveguide. Measured intensity of light transmitted by end-firing from the laser through the curved waveguide was 35% of the laser emission with a narrowband output. Also, etched double heterojunction mesa laser structures were fabricated on underlying waveguides. The emission from these lasers was evanescently coupled to this guide. A coupling of 25% of the laser emission to the guide was observed.

• Research Organization: Minnesota Univ., Minneapolis (USA). Dept. of Civil and Mineral Engineering
• OSTI ID: 7321229
• Report Number(s): AD-A-038792; TI-08-77-12
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASER MATERIALS
LASERS
PERFORMANCE TESTING
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
TESTING
WAVEGUIDES