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Diode laser with external lens cavity

Patent ·
OSTI ID:5741242
This patent describes a laser configuration. It comprises: a diode laser having a back facet reflector and a front partially transmitting facet, a lens system positioned in front of the front facet for transforming a near field distribution of light transmitted through the front facet to a far field pattern, and means placed in front of the lens system in the far field pattern for reflecting the far field pattern of light in a spatially selective manner back toward the diode laser. The spatially selective reflecting means including a first high reflectivity thin stripe and a second partially reflective and partially transmissive thin strip. The second thin stripe having a reflectivity that is substantially less than the reflectivity of the first strip. The first and second thin stripes being positioned in front of lobes of the far field pattern corresponding to a desired laser mode so as to reflect substantially more light of the desired mode than light of other undesired modes. The second thin stripe partially transmitting one lobe of the far field pattern to provide a laser output.
Assignee:
Spectra Diode Lab., Inc., San Jose, CA (USA)
Patent Number(s):
US 4995050; A
Application Number:
PPN: US 7-438600
OSTI ID:
5741242
Country of Publication:
United States
Language:
English

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