GaAs; GaAlAs ridge waveguide lasers and their monolithic integration using the ion beam etching process
Journal Article
·
· IEEE (Institute of Electrical and Electronics Engineers) Journal of Quantum Electronics; (USA)
- Laboratoire de Bagneux, Centre National d'Etudes des Telecommunications, 92220 Bagneux (FR)
The authors detail the fabrication process of GaAs/GaAlAs ridge waveguide lasers and present their performance characteristics. Threshold currents as low as 8 mA and differential quantum efficiencies as high as 90 percent have been obtained for 250 {mu}m long GRIN-SCH SQW lasers. High-speed short-cavity ridge waveguide lasers for which both the ridge stripe and one mirror facet were formed by Ar-ion beam etching have been achieved. The dependance of threshold current and lasing spectra on the cavity length have been theoretically and experimentally investigated. This process has been successfully used to monolithically integrate a laser diode (LD) with a photodiode (PD) or a field-effect transistor (FET).
- OSTI ID:
- 5365515
- Journal Information:
- IEEE (Institute of Electrical and Electronics Engineers) Journal of Quantum Electronics; (USA), Journal Name: IEEE (Institute of Electrical and Electronics Engineers) Journal of Quantum Electronics; (USA) Vol. 25:11; ISSN 0018-9197; ISSN IEJQA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARGON IONS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHARGED PARTICLES
CURRENT DENSITY
EFFICIENCY
ELECTRONIC CIRCUITS
EMISSION
ENERGY-LEVEL TRANSITIONS
ETCHING
FABRICATION
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INTEGRATED CIRCUITS
ION BEAMS
IONS
LASER CAVITIES
LASERS
MICROELECTRONIC CIRCUITS
PERFORMANCE
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
STIMULATED EMISSION
SURFACE FINISHING
TRANSISTORS
WAVEGUIDES
426002* -- Engineering-- Lasers & Masers-- (1990-)
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARGON IONS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHARGED PARTICLES
CURRENT DENSITY
EFFICIENCY
ELECTRONIC CIRCUITS
EMISSION
ENERGY-LEVEL TRANSITIONS
ETCHING
FABRICATION
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INTEGRATED CIRCUITS
ION BEAMS
IONS
LASER CAVITIES
LASERS
MICROELECTRONIC CIRCUITS
PERFORMANCE
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
STIMULATED EMISSION
SURFACE FINISHING
TRANSISTORS
WAVEGUIDES