Nanofabrication of photonic lattice structures in GaAs/AlGaAs

Journal Article · Mon Nov 01 04:00:00 EST 1993 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

DOI:https://doi.org/10.1116/1.586641· OSTI ID:5687397

Wendt, J R; Vawter, G A; Gourley, P L; Brennan, T M; Hammons, B E ^[1]

---

1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

The nanofabrication of two-dimensional photonic lattice structures in GaAs/AlGaAs is reported. The nanofabrication procedure combines direct-write electron-beam lithography and reactive-ion-beam etching to achieve etched features as small as 50 nm. The lattice comprises a hexagonal array of air cylinders etched into a semiconductor surface with a refractive index contrast of 3.54. A range of air volume fractions from 14% to 84% was investigated. The lithographic, masking, and etching processes necessary to fabricate the lattice are described along with practical limitations to achieving a lattice of arbitrary air volume fraction. Initial results from optical characterization of the lattice are also presented.

• OSTI ID: 5687397
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 11:6; ISSN JVTBD9; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

661220* -- Particle Beam Production & Handling
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABSORPTION SPECTRA
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
ELECTRON BEAMS
ENERGY GAP
ETCHING
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
ION BEAMS
LATTICE PARAMETERS
LEPTON BEAMS
LIGHT TRANSMISSION
OPTICAL PROPERTIES
PARTICLE BEAMS
PHYSICAL PROPERTIES
PNICTIDES
REFRACTIVE INDEX
SPECTRA
SURFACE FINISHING
Ta
Targets-- (1992-)