Photoluminescence of individual doped GaAs/AlGaAs nanofabricated quantum dots

Journal Article · Mon Apr 30 00:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2734397· OSTI ID:20971896

Kalliakos, Sokratis; Garcia, Cesar Pascual; Pellegrini, Vittorio; Zamfirescu, Marian; Cavigli, Lucia; Gurioli, Massimo; Vinattieri, Anna; Pinczuk, Aron; Dennis, Brian S; Pfeiffer, Loren N; West, Ken W ^[1]

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1. NEST CNR-INFM, Scuola Normale Superiore, Piazza dei Cavalieri 7, I-56126 Pisa (Italy)

Dilute arrays of GaAs/AlGaAs modulation-doped quantum dots with same sizes fabricated by electron beam lithography and low impact reactive ion etching exhibit highly uniform luminescence lines. Single quantum dots display spectral emission with peak energies and linewidths linked largely to the geometrical diameter of the dot and to the built-in electron population. Multicharged excitonic and biexcitonic emission intensities have activation energy of about 2 meV. These results highlight the potential of high quality nanofabricated quantum dots for applications in areas that require fine control of optical emission.

• OSTI ID: 20971896
• Journal Information: Applied Physics Letters, Vol. 90, Issue 18; Other Information: DOI: 10.1063/1.2734397; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
ALUMINIUM ARSENIDES
DOPED MATERIALS
ELECTRON BEAMS
ETCHING
EXCITONS
GALLIUM ARSENIDES
LINE WIDTHS
PHOTOLUMINESCENCE
QUANTUM DOTS
SEMICONDUCTOR MATERIALS