High excitation power photoluminescence studies of ultra-low density GaAs quantum dots

Journal Article · Wed Dec 04 00:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4848470· OSTI ID:22261886

Sonnenberg, D.; Graf, A.; Paulava, V.; Heyn, Ch.; Hansen, W. ^[1]

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1. Institut für Angewandte Physik und Zentrum für Mikrostrukturforschung, Universität Hamburg, Jungiusstr. 11, 20355 Hamburg (Germany)

We fabricate GaAs epitaxial quantum dots (QDs) by filling of self-organized nanoholes in AlGaAs. The QDs are fabricated under optimized process conditions and have ultra-low density in the 10{sup 6} cm{sup −2} regime. At low excitation power the optical emission of single QDs exhibit sharp excitonic lines, which are attributed to the recombination of excitonic and biexcitonic states. High excitation power measurements reveal surprisingly broad emission lines from at least six QD shell states.

• OSTI ID: 22261886
• Journal Information: AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM ARSENIDES
DENSITY
EPITAXY
EXCITATION
GALLIUM ARSENIDES
PHOTOLUMINESCENCE
QUANTUM DOTS