Here, a major challenge in nanofabrication is to pattern unconventional substrates that cannot be processed for a variety of reasons, such as incompatibility with spin coating, electron beam lithography, optical lithography, or wet chemical steps. Here, we present a versatile nanofabrication method based on re-usable silicon membrane hard masks, patterned using standard lithography and mature silicon processing technology. These masks, transferred precisely onto targeted regions, can be in the millimetre scale. They allow for fabrication on a wide range of substrates, including rough, soft, and non-conductive materials, enabling feature linewidths down to 10 nm. Plasma etching, lift-off, and ion implantation are realized without the need for scanning electron/ion beam processing, UV exposure, or wet etching on target substrates.
Li, Luozhou, et al. "Nanofabrication on unconventional substrates using transferred hard masks." Scientific Reports, vol. 5, Jan. 2015. https://doi.org/10.1038/srep07802
@article{osti_1258778,
author = {Li, Luozhou and Bayn, Igal and Lu, Ming and Nam, Chang -Yong and Schroder, Tim and Stein, Aaron and Harris, Nicholas C. and Englund, Dirk},
title = {Nanofabrication on unconventional substrates using transferred hard masks},
annote = {Here, a major challenge in nanofabrication is to pattern unconventional substrates that cannot be processed for a variety of reasons, such as incompatibility with spin coating, electron beam lithography, optical lithography, or wet chemical steps. Here, we present a versatile nanofabrication method based on re-usable silicon membrane hard masks, patterned using standard lithography and mature silicon processing technology. These masks, transferred precisely onto targeted regions, can be in the millimetre scale. They allow for fabrication on a wide range of substrates, including rough, soft, and non-conductive materials, enabling feature linewidths down to 10 nm. Plasma etching, lift-off, and ion implantation are realized without the need for scanning electron/ion beam processing, UV exposure, or wet etching on target substrates.},
doi = {10.1038/srep07802},
url = {https://www.osti.gov/biblio/1258778},
journal = {Scientific Reports},
issn = {ISSN 2045-2322},
volume = {5},
place = {United States},
publisher = {Nature Publishing Group},
year = {2015},
month = {01}}
Journal Article
·
Sun Oct 31 23:00:00 EST 1993
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
·OSTI ID:5687397