Effects of the growth temperature and As/Ga flux ratio on the incorporation of excess As into low temperature grown GaAs

Journal Article · Thu Jan 01 04:00:00 EST 1998 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.366723· OSTI ID:565635

Luysberg, M; Sohn, H; Prasad, A; Specht, P; Liliental-Weber, Z; Weber, E R ^[1]; Gebauer, J; Krause-Rehberg, R ^[2]

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1. University of California and Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)
2. University of Halle (Germany)

The controlled incorporation of excess As into GaAs grown by molecular beam epitaxy at low growth temperatures (LT-GaAs) is explored. The substrate temperature and the As/Ga flux ratio were systematically varied to investigate the influence of growth parameters on the formation of native defects and structural properties. Near infrared absorption, magnetic circular dichroism of absorption, and slow positron annihilation were applied to determine point defect concentrations of As antisites (As{sub Ga}) and Ga vacancies (V{sub Ga}). Structural properties of as-grown and annealed LT-GaAs layers were investigated by x-ray diffraction and transmission electron microscopy. In a well defined parameter range the lattice expansion of the LT-GaAs layers correlates with the amount of As{sub Ga}. The V{sub Ga} acceptor concentration can quantitatively account for the ionization of the As{sub Ga} donors. {copyright} {ital 1998 American Institute of Physics.}

• OSTI ID: 565635
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 83; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL STRUCTURE
GALLIUM ARSENIDES
INFRARED SPECTRA
LATTICE PARAMETERS
MAGNETIC CIRCULAR DICHROISM
MOLECULAR BEAM EPITAXY
POINT DEFECTS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION