Superconductivity in low-temperature grown III-V thin films. Final report, 15 June 1992-31 May 1995

Technical Report · Mon Jan 01 04:00:00 EST 1996

OSTI ID:256494

Weber, E R

In this AASERT project, the authors studied the electronic properties of various low-temperature grown III-V thin films using both optical and electrical characterization techniques. The previously found superconductivity effect could be ascribed to inclusions of group-III elements that were not related to the low-temperature growth conditions. The results found here indicate that the anion antisite, As{sub Ga} dominates the properties of LT-GaAs. This finding will allow future improvements in LT-GaAs by designing optimized concentrations of As{sub Ga} related deep levels for specific applications. In LT-AlGaAs, the very deep arsenic antisite level leads to the formation of layers with very high resistivity. In LT-InP and possibly in LT-InAlAs, the energy location of the anion antisite defects prevents the formation of highly resistive, undoped layers. With MCDA, the authors were able to directly prove that LT InP is highly n-type due to P{sub In} antisite defects, and to suggest which transitions form the magnetic circular dichroism spectrum for this defect.

• Research Organization: California Univ., Berkeley, CA (United States)
• OSTI ID: 256494
• Report Number(s): AD-A--304269/4/XAB; CNN: Contract F49620-92-J-0354
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRONIC STRUCTURE
GALLIUM ARSENIDES
INCLUSIONS
INDIUM PHOSPHIDES
LAYERS
MAGNETIC CIRCULAR DICHROISM
PROGRESS REPORT
SUPERCONDUCTIVITY
THIN FILMS