Native point defects in low-temperature-grown GaAs

Journal Article · Mon Jul 10 04:00:00 EDT 1995 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.114782· OSTI ID:69439

Liu, X; Prasad, A; Nishio, J; Weber, E R ^[1]; Liliental-Weber, Z; Walukiewicz, W ^[2]

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1. Department of Materials Science and Mineral Engineering, University of California, Berkeley, California 94720 (United States)
2. Materials Science Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)

We present structural and electronic data which indicate that the dominant defects in GaAs grown at low temperatures (LT GaAs) by molecular beam epitaxy (MBE) are As antisites (As{sub Ga}) and Ga vacancies ({ital V}{sub Ga}), with negligible amounts of As interstitials (As{sub {ital i}}). We show that the change of lattice parameter correlates with the concentration of As{sub Ga}, and that As{sub Ga} alone can account for the lattice expansion. We also show that the total concentration of As{sub Ga} has a characteristic second power dependence on the concentration of As{sub Ga} in the positive charge state for the material grown at different temperatures. This can be understood provided that {ital V}{sub Ga} defects are the acceptors responsible for the carrier compensation. Our results are consistent with most experimental results and the theoretical expectation from the calculation of defect formation energies. We find that the conclusion may also be true in As-rich bulk GaAs. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

• Research Organization: Lawrence Berkeley National Laboratory
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 69439
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 2 Vol. 67; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL DEFECTS
GALLIUM ARSENIDES
INTERSTITIALS
LATTICE PARAMETERS
MOLECULAR BEAM EPITAXY
POINT DEFECTS
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K