Mechanism responsible for the semi-insulating properties of low-temperature-grown GaAs

Journal Article · Mon Dec 05 04:00:00 EST 1994 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.112490· OSTI ID:6769109

Liu, X; Prasad, A; Chen, W M; Kurpiewski, A; Stoschek, A; Liliental-Weber, Z; Weber, E R ^[1]

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1. Department of Materials Science and Mineral Engineering, University of California, Berkeley, California 94720 (United States)

The mechanism responsible for the semi-insulating properties of low-temperature-grown GaAs is investigated by determining the concentration of arsenic antisite (As[sub Ga])-related defects in the material. The concentrations of the defects in neutral and positively charged states, As[sup 0][sub Ga] and As[sup +][sub Ga], are determined by near-infrared absorption and magnetic circular dichroism of absorption, respectively. Materials grown and annealed at different temperatures are investigated. We find that the defects are abundant in all samples studied, with the concentration of As[sup 0][sub Ga] higher than that of As[sup +][sub Ga] defects. The results indicate that the defects can account for the pinning of the Fermi energy and consequently also the semi-insulating properties of the material.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6769109
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 65:23; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
ABSORPTION SPECTRA
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DICHROISM
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ENERGY LEVELS
EPITAXY
FERMI LEVEL
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
INFRARED SPECTRA
MAGNETIC CIRCULAR DICHROISM
MOLECULAR BEAM EPITAXY
PHYSICAL PROPERTIES
PNICTIDES
PRECIPITATION
SEPARATION PROCESSES
SPECTRA