Basic mechanisms of radiation effects in electronic materials and devices. Final report, September 1986-September 1987
Technical Report
·
OSTI ID:5646360
This report reviews the primary physical processes underlying the response of electronic materials and devices to radiation as well as the relationship of these processes to the modes of circuit degradation and failure. An overview presents brief discussions of the major radiation environments of practical interest, the interaction of radiation with solid targets, common terminology of radiation exposure, and the primary radiation effects in electronic materials, including ionization effects (radiation-induced photocurrents and space charge buildup) and atomic displacement damage effects. An emphasis is given to the problem of total-dose ionization response, primarily in metal-oxide-semiconductor (MOS) systems. In particular, a description of the basic physical phenomena underlying the complex time history of the MOS radiation response is given, and some implications of the time-dependent response for issues of radiation testing, hardness assurance, and radiation-response prediction are pointed out. There is also discussion on the implications of scaling down the gate oxide thickness and on the increasingly important problem of radiation-induced leakage currents.
- Research Organization:
- Harry Diamond Labs., Adelphi, MD (USA)
- OSTI ID:
- 5646360
- Report Number(s):
- AD-A-186936/1/XAB; HDL-TR-2129
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effects of reliability screens of MOS charge trapping
Effects of reliability screens on MOS charge trapping
Effect of oxide thickness on interface-trap buildup rates
Conference
·
Fri Sep 01 00:00:00 EDT 1995
·
OSTI ID:105061
Effects of reliability screens on MOS charge trapping
Journal Article
·
Sat Jun 01 00:00:00 EDT 1996
· IEEE Transactions on Nuclear Science
·
OSTI ID:277724
Effect of oxide thickness on interface-trap buildup rates
Conference
·
Tue Sep 01 00:00:00 EDT 1992
·
OSTI ID:10180642
Related Subjects
36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
CHALCOGENIDES
CURRENTS
DAMAGE
DIMENSIONS
DOCUMENT TYPES
ELECTRONIC EQUIPMENT
EQUIPMENT
IONIZATION
MATERIALS
MICROELECTRONICS
NUCLEAR WEAPONS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PROGRESS REPORT
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SOLIDS
SPACE CHARGE
TARGETS
THICKNESS
TIME DEPENDENCE
WEAPONS
360605 -- Materials-- Radiation Effects
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
CHALCOGENIDES
CURRENTS
DAMAGE
DIMENSIONS
DOCUMENT TYPES
ELECTRONIC EQUIPMENT
EQUIPMENT
IONIZATION
MATERIALS
MICROELECTRONICS
NUCLEAR WEAPONS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PROGRESS REPORT
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SOLIDS
SPACE CHARGE
TARGETS
THICKNESS
TIME DEPENDENCE
WEAPONS